SISHA12ADN-T1-GE3
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SISHA12ADN-T1-GE3

Category:
-
Manufacturer:
Description:
MOSFET N-CH 30V 22A/25A PPAK
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
2070 pF @ 15 V
Package / Case
PowerPAK® 1212-8SH
Supplier Device Package
PowerPAK® 1212-8SH
Vgs (Max)
+20V, -16V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 10A, 10V
Power Dissipation (Max)
3.5W (Ta), 28W (Tc)
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 25A (Tc)