UF3C120400B7S
  • image of UF3C120400B7S

UF3C120400B7S

Category:
-
Manufacturer:
Description:
SICFET N-CH 1200V 7.6A D2PAK-7
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$9.52

Request a Quote

Stock 3797

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Vgs (Max)
±25V
Power Dissipation (Max)
100W (Tc)
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Supplier Device Package
D2PAK-7
Drive Voltage (Max Rds On, Min Rds On)
12V
Technology
SiCFET (Cascode SiCJFET)
Vgs(th) (Max) @ Id
6V @ 10mA
Rds On (Max) @ Id, Vgs
515mOhm @ 5A, 12V
Gate Charge (Qg) (Max) @ Vgs
22.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
739 pF @ 800 V