UJ4C075033L8SSR
  • image of UJ4C075033L8SSR

UJ4C075033L8SSR

Category:
-
Manufacturer:
Description:
750V/33MO,SICFET,G4,TOLL
Package:
Packaging:
Bulk
RoHS：
YES

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Power Dissipation (Max)
205W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Technology
SiCFET (Silicon Carbide)
Package / Case
8-PowerSFN
Vgs(th) (Max) @ Id
6V @ 10mA
Drain to Source Voltage (Vdss)
750 V
Gate Charge (Qg) (Max) @ Vgs
37.8 nC @ 15 V
Supplier Device Package
TOLL
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 400 V
Current - Continuous Drain (Id) @ 25°C
44A (Tj)
Rds On (Max) @ Id, Vgs
41mOhm @ 230A, 12V