ALD111933PAL
  • image of ALD111933PAL

ALD111933PAL

Category:
-
Manufacturer:
Description:
MOSFET 2N-CH 10.6V 8PDIP
Package:
Packaging:
Tube
RoHS：
YES
Price:
$4.83

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
M2P45M12W2-1LA
STMicroelectronics
AUTOMOTIVE-GRADE ACEPACK DMT-32
M2TP80M12W2-2LA
STMicroelectronics
AUTOMOTIVE-GRADE ACEPACK DMT-32
BSS8402DW
Shenzhen Slkormicro Semicon Co., Ltd.
50V 3@10V,0.13A 500MV 1 N-CHANNE
SL3134KDW
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 350M@4.5V,0.75A 150MW
SL3139KDW
Shenzhen Slkormicro Semicon Co., Ltd.
20V 660MA 700M@2.5V,0.66A 150MW
NXVF6532M3TG01
onsemi
SIC POWER MOSFET MODULE 650V, 32
MSIE40N90-6
N-MOSFET,40V,90A,DFN14X12
MSIE40N150-6
N-MOSFET,40V,150A,DFN14X12
FF06MR12A04MA2AKSA1
Infineon Technologies
HYBRIDPACK DSC S MODULE WITH SIC
GCMX080A120B2T1P
1200V 80 SIC MOSFET SIX-PACK MOD
Specifications
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Part Status
Active
Supplier Device Package
8-PDIP
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
0°C ~ 70°C (TJ)
Power - Max
500mW
Gate Charge (Qg) (Max) @ Vgs
-
Current - Continuous Drain (Id) @ 25°C
-
Configuration
2 N-Channel (Dual) Matched Pair
Drain to Source Voltage (Vdss)
10.6V
Input Capacitance (Ciss) (Max) @ Vds
2.5pF @ 5V
Rds On (Max) @ Id, Vgs
500Ohm @ 5.9V
Vgs(th) (Max) @ Id
3.35V @ 1µA