NXVF6532M3TG01
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NXVF6532M3TG01

Category:
-
Manufacturer:
Description:
SIC POWER MOSFET MODULE 650V, 32
Package:
Packaging:
Tube
RoHS：
YES

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NXVF6532M3TG01
onsemi
SIC POWER MOSFET MODULE 650V, 32
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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Configuration
4 N-Channel (Full Bridge)
Technology
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
650V
Rds On (Max) @ Id, Vgs
44mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
4V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs
58nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
1215pF @ 400V
Power - Max
65.2W (Tj)
Package / Case
13-SSIP Exposed Pad, Formed Leads
Supplier Device Package
APM16