IAUC60N04S6L045HATMA1
  • image of IAUC60N04S6L045HATMA1

IAUC60N04S6L045HATMA1

Category:
-
Manufacturer:
Description:
MOSFET 2N-CH 40V 60A 8TDSON
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.64

Request a Quote

Stock 17162

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
M2P45M12W2-1LA
STMicroelectronics
AUTOMOTIVE-GRADE ACEPACK DMT-32
M2TP80M12W2-2LA
STMicroelectronics
AUTOMOTIVE-GRADE ACEPACK DMT-32
BSS8402DW
Shenzhen Slkormicro Semicon Co., Ltd.
50V 3@10V,0.13A 500MV 1 N-CHANNE
SL3134KDW
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 350M@4.5V,0.75A 150MW
SL3139KDW
Shenzhen Slkormicro Semicon Co., Ltd.
20V 660MA 700M@2.5V,0.66A 150MW
NXVF6532M3TG01
onsemi
SIC POWER MOSFET MODULE 650V, 32
MSIE40N90-6
N-MOSFET,40V,90A,DFN14X12
MSIE40N150-6
N-MOSFET,40V,150A,DFN14X12
FF06MR12A04MA2AKSA1
Infineon Technologies
HYBRIDPACK DSC S MODULE WITH SIC
GCMX080A120B2T1P
1200V 80 SIC MOSFET SIX-PACK MOD
Specifications
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
40V
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
2V @ 13µA
Configuration
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C
60A (Tj)
Power - Max
52W (Tc)
Supplier Device Package
PG-TDSON-8-57
Input Capacitance (Ciss) (Max) @ Vds
1136pF @ 25V