QS8M13TCR
QS8M13TCR
  • image of QS8M13TCR
  • image of QS8M13TCR

QS8M13TCR

Category:
-
Manufacturer:
Description:
MOSFET N/P-CH 30V 6A/5A TSMT8
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Operating Temperature
150°C (TJ)
Vgs(th) (Max) @ Id
2.5V @ 1mA
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Power - Max
1.5W
Rds On (Max) @ Id, Vgs
28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs
5.5nC @ 5V
Package / Case
8-SMD, Flat Leads
Supplier Device Package
TSMT8
Current - Continuous Drain (Id) @ 25°C
6A, 5A
Input Capacitance (Ciss) (Max) @ Vds
390pF @ 10V