SI4910DY-T1-E3
  • image of SI4910DY-T1-E3

SI4910DY-T1-E3

Category:
-
Manufacturer:
Description:
MOSFET 2N-CH 40V 7.6A 8SOIC
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
8-SOIC
Vgs(th) (Max) @ Id
2V @ 250µA
Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
40V
Power - Max
3.1W
Current - Continuous Drain (Id) @ 25°C
7.6A
Rds On (Max) @ Id, Vgs
27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
855pF @ 20V