SI7501DN-T1-GE3
  • image of SI7501DN-T1-GE3

SI7501DN-T1-GE3

Category:
-
Manufacturer:
Description:
MOSFET N/P-CH 30V 5.4A PPAK 1212
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
M2P45M12W2-1LA
STMicroelectronics
AUTOMOTIVE-GRADE ACEPACK DMT-32
M2TP80M12W2-2LA
STMicroelectronics
AUTOMOTIVE-GRADE ACEPACK DMT-32
BSS8402DW
Shenzhen Slkormicro Semicon Co., Ltd.
50V 3@10V,0.13A 500MV 1 N-CHANNE
SL3134KDW
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 350M@4.5V,0.75A 150MW
SL3139KDW
Shenzhen Slkormicro Semicon Co., Ltd.
20V 660MA 700M@2.5V,0.66A 150MW
NXVF6532M3TG01
onsemi
SIC POWER MOSFET MODULE 650V, 32
MSIE40N90-6
N-MOSFET,40V,90A,DFN14X12
MSIE40N150-6
N-MOSFET,40V,150A,DFN14X12
FF06MR12A04MA2AKSA1
Infineon Technologies
HYBRIDPACK DSC S MODULE WITH SIC
GCMX080A120B2T1P
1200V 80 SIC MOSFET SIX-PACK MOD
Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
3V @ 250µA
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
-
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Power - Max
1.6W
Configuration
N and P-Channel, Common Drain
Package / Case
PowerPAK® 1212-8 Dual
Supplier Device Package
PowerPAK® 1212-8 Dual
Current - Continuous Drain (Id) @ 25°C
5.4A, 4.5A
Rds On (Max) @ Id, Vgs
35mOhm @ 7.7A, 10V