IPG20N04S4L18AATMA1
  • image of IPG20N04S4L18AATMA1

IPG20N04S4L18AATMA1

Category:
-
Manufacturer:
Description:
MOSFET 2N-CH 40V 20A 8TDSON
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.58

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Specifications
Part Status
Active
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Configuration
2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Drain to Source Voltage (Vdss)
40V
Package / Case
8-PowerVDFN
Mounting Type
Surface Mount, Wettable Flank
Vgs(th) (Max) @ Id
2.2V @ 8µA
Rds On (Max) @ Id, Vgs
18mOhm @ 17A, 10V
Supplier Device Package
PG-TDSON-8-10
Power - Max
26W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1071pF @ 25V