NTMD2C02R2SG
  • image of NTMD2C02R2SG

NTMD2C02R2SG

Category:
-
Manufacturer:
Description:
MOSFET N/P-CH 20V 5.2A 8SOIC
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
M2P45M12W2-1LA
STMicroelectronics
AUTOMOTIVE-GRADE ACEPACK DMT-32
M2TP80M12W2-2LA
STMicroelectronics
AUTOMOTIVE-GRADE ACEPACK DMT-32
BSS8402DW
Shenzhen Slkormicro Semicon Co., Ltd.
50V 3@10V,0.13A 500MV 1 N-CHANNE
SL3134KDW
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 350M@4.5V,0.75A 150MW
SL3139KDW
Shenzhen Slkormicro Semicon Co., Ltd.
20V 660MA 700M@2.5V,0.66A 150MW
NXVF6532M3TG01
onsemi
SIC POWER MOSFET MODULE 650V, 32
MSIE40N90-6
N-MOSFET,40V,90A,DFN14X12
MSIE40N150-6
N-MOSFET,40V,150A,DFN14X12
FF06MR12A04MA2AKSA1
Infineon Technologies
HYBRIDPACK DSC S MODULE WITH SIC
GCMX080A120B2T1P
1200V 80 SIC MOSFET SIX-PACK MOD
Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
8-SOIC
Configuration
N and P-Channel
Drain to Source Voltage (Vdss)
20V
Power - Max
2W
FET Feature
Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Current - Continuous Drain (Id) @ 25°C
5.2A, 3.4A
Rds On (Max) @ Id, Vgs
43mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 10V