SI4511DY-T1-E3
  • image of SI4511DY-T1-E3

SI4511DY-T1-E3

Category:
-
Manufacturer:
Description:
MOSFET N/P-CH 20V 7.2A 8SOIC
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-SOIC
Configuration
N and P-Channel
Drain to Source Voltage (Vdss)
20V
FET Feature
Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W
Gate Charge (Qg) (Max) @ Vgs
18nC @ 4.5V
Vgs(th) (Max) @ Id
1.8V @ 250µA
Current - Continuous Drain (Id) @ 25°C
7.2A, 4.6A
Rds On (Max) @ Id, Vgs
14.5mOhm @ 9.6A, 10V