SI5515CDC-T1-E3
  • image of SI5515CDC-T1-E3

SI5515CDC-T1-E3

Category:
-
Manufacturer:
Description:
MOSFET N/P-CH 20V 4A 1206-8
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.33

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Configuration
N and P-Channel
Drain to Source Voltage (Vdss)
20V
FET Feature
Logic Level Gate
Package / Case
8-SMD, Flat Leads
Power - Max
3.1W
Vgs(th) (Max) @ Id
800mV @ 250µA
Supplier Device Package
1206-8 ChipFET™
Rds On (Max) @ Id, Vgs
36mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
11.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
632pF @ 10V